| Specification |
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, Power Supplies;
Batch Number: 2022+;
Manufacturing Technology: MCU;
Model: Stm32f103;
Package: DIP;
Conductive Type: Bipolar Integrated Circuit;
Integration: Vlsi;
Operating Temperature: -40℃ - 85℃;
Technics: Thin Film IC;
Shape: Sot-23-6;
Brand: Richtek;
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Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 50±0.2mm;
Thickness: 280±25μm;
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Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 76±0.2mm;
Thickness: 380±25μm;
|
Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Frront Side: Polished;
Edge: Polished;
Diameter: 150±0.2mm;
Thickness: 675±25μm;
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Application: Semi Standard;
Material: Compound Semiconductor;
Type: P-Type Semiconductor;
Growth Method: CZ;
Crystal Orientation: 100;
Dopant: Boron;
Resistivity: 1-100Ω;
Front Side: Polished;
Backside: Etched;
Diameter: 200±0.2mm;
Thickness: 725±25mm;
Oxide Thickness: 1000A;
Ttv: ≤25μm;
Warp: ≤40μm;
Bow: ≤40μm;
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