| Specification |
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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Application: Power Electronic Components, Power Management, DC-DC Converter, Load Switch, Le;
Batch Number: 25+;
Manufacturing Technology: Semiconductor Advanced Trench MOS Process;
Material: Silicon Semiconductor;
Model: Wsf4022;
Package: to-252-4L;
Signal Processing: Switch Control;
Type: Dual N-Channel Enhancement Mode Mosfet;
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Application: Power Electronic Components, Power Management, DC-DC Converter, Load Switch, Le;
Batch Number: 25+;
Manufacturing Technology: Semiconductor Advanced Trench MOS Process;
Material: Silicon Semiconductor;
Model: Wsf20n20g;
Package: to-252;
Signal Processing: Switch Control;
Type: Dual N-Channel Enhancement Mode Mosfet;
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Application: Power Electronic Components, Power Management, DC-DC Converter, Load Switch, Le;
Batch Number: 25+;
Manufacturing Technology: Semiconductor Advanced Trench MOS Process;
Material: Silicon Semiconductor;
Model: Wsf40n10A;
Package: to-252;
Signal Processing: Switch Control;
Type: Dual N-Channel Enhancement Mode Mosfet;
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Application: Power Electronic Components, Power Management, DC-DC Converter, Load Switch, Le;
Batch Number: 25+;
Manufacturing Technology: Semiconductor Advanced Trench MOS Process;
Material: Silicon Semiconductor;
Model: Wsf45p06;
Package: to-252;
Signal Processing: Switch Control;
Type: Dual N-Channel Enhancement Mode Mosfet;
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