| Specification |
Application: Detector, Diode, LCD Display Controller, Power Electronic Components, Radio, Refrigerator, Solar Cell, Television, Temperature Measurement, EV, Solar, Wind, UPS, Motor Drives;
Batch Number: 2023+;
Manufacturing Technology: Discrete Device;
Material: Compound Semiconductor;
Model: ST;
Package: SMD;
Signal Processing: Analog Digital Composite and Function;
Type: N-Type Semiconductor;
Product Type: IGBT;
Voltage Rating (Vces): 750V ~ 1700V;
Current Rating (IC): 600A ~ 900A;
Max. Junction Temperature: 175°c;
Operating Temperature: -40°c ~ +150°c;
Isolation Voltage: 4000V RMS;
Technology: Trench Gate, Low Vce(Sat);
Diode: Anti-Parallel, Soft Recovery;
Cooling: Air or Water Cooling;
Applications: EV, Solar, Wind, UPS, Motor Drives;
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Voltage: 200V;
Current: 20A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Silicon;
Package: to-220;
Application: Switching Power Supply;
Model: Mbr20200CT;
Batch Number: 2021;
Brand: Wxdh;
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Voltage: 160V;
Current: 10A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Silicon;
Package: to-220-2L;
Application: Switching Power Supply;
Model: Mur1060;
Batch Number: 2021;
Brand: Wxdh;
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Voltage: 800V;
Current: 7A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Metal-Oxide Semiconductor;
Package: to-220;
Application: LED Power Switch Circuit, Electronic Ballast;
Model: 7n80;
Batch Number: 2021;
Brand: Wxdh;
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Voltage: 700V;
Current: 10A;
Manufacturing Technology: Discrete Device;
Type: N-type Semiconductor;
Material: Silicon;
Package: to-220;
Application: Switching Power Supply;
Model: Mur1070CT;
Batch Number: 2021;
Brand: Wxdh;
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