| Specification |
Type: Laser;
Output Signal Type: NPN PNP;
Production Process: Optical Sensor;
Material: Stainless Steel;
Feature: Laser Sensor;
IP Rating: IP55;
Customized: Customized;
Sensing Distance: 50mm;
Working Voltage: 10-30V DC;
Response Time: 5ms;
Protection: IP55;
Maximum Load: 120mA;
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Type: Diffuse Reflection Type Photoelectric Sensor;
Output Signal Type: Switching Type;
Production Process: Normal Wirewound;
Material: Metal;
Feature: Low Temperature Resistant;
IP Rating: IP65;
Customized: Customized;
Output Mode: Dual Channel Ossd Output/Alarm Output;
Examination Area: 0.5~6 M/0.5~8 M;
Anti-Optical Interference: Sunshine Max10000lux;
Package Size: 50 * 15* 15cm;
Space Between Optical Axes: 10 mm \20 mm \40 mm \80 mm;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
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