| Specification |
Type: Slot Type Photoelectric Sensor;
Output Signal Type: Analog Type;
Production Process: Normal Wirewound;
Material: Plastic;
Feature: Low Temperature Resistant;
IP Rating: IP22;
Customized: Non-Customized;
Description: Sensor;
Product Name: 3-80cm E18-D80nk Sensor Module;
Package: Generic Package;
Mounting Type: DIP;
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Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
Type: Through Beam Photo Electric Sensors;
Output Signal Type: Transistor Output, Open Collector, NPN/PNP Based O;
Production Process: Normal Wirewound;
Material: PC+ABS;
Feature: SemiConductor;
IP Rating: IP65;
Customized: Non-Customized;
Light Source Wavelength: 850nm;
Protective Circuit: Reverse Polarity Protection, Short Circuit Protect;
Gross Packing Weight: 0.500 Kg;
Resistance to Ambient Light: Sunlight: Max.60000lux; Incandescent Lamp: Max.300;
Output Type: Transistor Output, Open Collector, NPN/PNP Based O;
Manner of Execution: Select The Light on/Dark on Mode by Model;
Protection Circuit: Reverse Polarity Protection, Short Circuit Protect;
|
